125 W CW over 1-2700 MHz, 50 V Airfast® RF Power GaN Transistor

MMRF5018HS

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Product Details

Features

  • Advanced GaN on SiC, offering high power density
  • Decade bandwidth performance
  • Enhanced thermal resistance packaging
  • Input matched for extended wideband performance
  • High ruggedness: > 20:1 VSWR
  • RoHS compliant

Part numbers include: MMRF5018HS.

Key Parametrics

  • Frequency (Min) (MHz)
    1
  • Frequency (Max) (MHz)
    2700
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    51
  • P1dB (Typ) (W)
    125
  • Die Technology
    GaN

RF Performance Tables

Typical 450–2700 MHz Performance

VDD = 50 Vdc, TA = 25°C, IDQ = 200 mA

Load Mismatch/Ruggedness

1. Measured in 450–2700 MHz reference circuit.
2. Measured in 2500 MHz production test fixture.

Documentation

Quick reference to our documentation types.

4 documents

Design Resources

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Design Files

2 design files

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