Design Files
2 design files
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Models
MMRF5018HS S-Parameters
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Printed Circuit Boards and Schematics
MMRF5018HS 450-2700 MHz PCB DXF file
125 W CW over 1-2700 MHz, 50 V Airfast® RF Power GaN Transistor
MMRF5018HS Receive alerts
The MMRF5018HS 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.
This part is characterized and performance is guaranteed for applications operating in the 1–2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Product Details
Features
- Advanced GaN on SiC, offering high power density
- Decade bandwidth performance
- Enhanced thermal resistance packaging
- Input matched for extended wideband performance
- High ruggedness: > 20:1 VSWR
- RoHS compliant
Part numbers include: MMRF5018HS.
Key Parametrics
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- Frequency (Min) (MHz)
- 1
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- Frequency (Max) (MHz)
- 2700
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- Supply Voltage (Typ) (V)
- 50
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- P1dB (Typ) (dBm)
- 51
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- P1dB (Typ) (W)
- 125
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- Die Technology
- GaN
RF Performance Tables
Typical 450–2700 MHz Performance
VDD = 50 Vdc, TA = 25°C, IDQ = 200 mA| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 450–2700(1) | CW | 100 CW | 12.0 | 40.0 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage | Result |
| 2500(2) | Pulse (100 µsec, 20% Duty Cycle) |
> 20:1 at All Phase Angles | 5.0 Peak (3 dB Overdrive) |
50 | No Device Degradation |
2. Measured in 2500 MHz production test fixture.
Documentation
Quick reference to our documentation types.